James David Sproch
24Patents
9h-index
22Co-inventors
75Inventor score
Filing activity: Jan 31, 1985 → Apr 15, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8264065B2 | ESD/antenna diodes for through-silicon vias | Electricity | 231 | Active |
| US6247134A | Method and system for pipe stage gating within an operating pipelined circuit for power savings | Emerging Cross-Sectional Technologies | 76 | Expired |
| US5903476A | Three-dimensional power modeling table having dual output capacitance indices | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6038381A | Method and system for determining a signal that controls the application of operands to a circuit-implemented function for power savings | Physics | 28 | Expired |
| US5838579A | State dependent power modeling | Physics | 25 | Expired |
| US6480815B1 | Path dependent power modeling | Physics | 25 | Expired |
| US5949689A | Path dependent power modeling | Physics | 22 | Expired |
| US6195630A | Three-dimensional power modeling table having dual output capacitance indices | Emerging Cross-Sectional Technologies | 15 | Expired |
| US8362622B2 | Method and apparatus for placing transistors in proximity to through-silicon vias | Emerging Cross-Sectional Technologies | 14 | Active |
| US4638459A | Virtual ground read only memory | Physics | 9 | Expired |
| US4719456A | Video dot intensity balancer | Physics | 4 | Expired |
| US6704878B1 | Apparatus and method for improved precomputation to minimize power dissipation of integrated circuits | Physics | 3 | Expired |
| US9275182B2 | Placing transistors in proximity to through-silicon vias | Emerging Cross-Sectional Technologies | 3 | Active |
| US8661387B2 | Placing transistors in proximity to through-silicon vias | Emerging Cross-Sectional Technologies | 2 | Active |
| US8999766B2 | ESD/antenna diodes for through-silicon vias | Electricity | 1 | Active |
| US11960346B1 | Energy provisioning | Electricity | 1 | Active |
| US9728528B2 | Method and apparatus for floating or applying voltage to a well of an integrated circuit | Electricity | 1 | Active |
| US9287253B2 | Method and apparatus for floating or applying voltage to a well of an integrated circuit | Electricity | 1 | Active |
| US9003348B2 | Placing transistors in proximity to through-silicon vias | Emerging Cross-Sectional Technologies | 1 | Active |
| US8904336B1 | Determination of meta-stable latch bias voltages | Physics | 1 | Active |
| US10741538B2 | Method and apparatus for floating or applying voltage to a well of an integrated circuit | Electricity | 0 | Active |
| US8877638B2 | ESD/antenna diodes for through-silicon vias | Electricity | 0 | Active |
| US12287695B2 | Energy provisioning | Electricity | 0 | Active |
| US12175287B2 | Processor instruction dispatch configuration | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.