Methods and apparatus for enhanced gas flow rate control
US9004107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jun 25, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/87885
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.