Film deposition method and film deposition apparatus
US9005459B2 · kind B2 · utility
1Cited by
16References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | May 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.