Methods for depositing films comprising cobalt and cobalt nitrides

US9005704B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Thompson · San Jose, US
• Jeffrey W. Anthis · San Jose, US
• David Knapp · Mineral Point, US
• Benjamin Schmiege · Santa Clara, US

Key dates

• Filing date: Mar 6, 2014
• Grant date: Apr 14, 2015
• Expiry date: Mar 6, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by:wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.