Method of forming patterns using block copolymers and articles thereof
US9005877B2 · kind B2 · utility
9Cited by
15References
15Claims
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Key dates
| Filing date | May 15, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jun 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.