Compositions comprising sulfonamide material and processes for photolithography
US9005880B2 · kind B2 · utility
1Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2009 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Aug 26, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.