Temperature control of chemical mechanical polishing
US9005999B2 · kind B2 · utility
16Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Mar 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.