Self aligned device with enhanced stress and methods of manufacture

US9006052B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Judson R. Holt · Wappingers Falls, US
• Viorel Ontalus · Danbury, US
• Keith H. Tabakman · Newburgh, US

Key dates

• Filing date: Oct 11, 2010
• Grant date: Apr 14, 2015
• Expiry date: Jun 11, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/018

Abstract

A method includes forming a stressed Si layer in a trench formed in a stress layer deposited on a substrate. The stressed Si layer forms an active channel region of a device. The method further includes forming a gate structure in the active channel region formed from the stressed Si layer.