Plasma doping a non-planar semiconductor device
US9006065B2 · kind B2 · utility
2Cited by
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23Claims
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Key dates
| Filing date | Oct 9, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.