Atomic layer deposition of antimony oxide films

US9006112B2 · kind B2 · utility

Assignee

• ASM International N.V. · NL

Inventors

• Raija H. Matero · Helsinki, FI
• Linda Lindroos · Helsinki, FI
• Hessel Sprey · Kessel-Lo, BE
• Jan Willem Maes · Wilrijk, BE
• David Kurt de Roest · Kessel-Lo, BE
• Dieter Pierreux · Dilbeek, BE
• Kees van der Jeugd · Heverlee, BE
• Lucia D'Urzo · Brussels, BE
• Tom E. Blomberg · Vantaa, FI

Key dates

• Filing date: Oct 11, 2012
• Grant date: Apr 14, 2015
• Expiry date: Oct 11, 2032

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23F1/26
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.