Resistance change element and nonvolatile memory device

US9006697B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Noritake Oomachi · Kashiwa, JP
• Junichi Wada · Yokohama, JP
• Kouji Matsuo · Yokohama, JP
• Tomotaka ARIGA · Kawasaki, JP
• Yoshio Ozawa · Yokohama, JP

Key dates

• Filing date: Feb 28, 2013
• Grant date: Apr 14, 2015
• Expiry date: Mar 29, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/826

Abstract

A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer.