Fin structure of semiconductor device
US9006786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material having the first lattice constant; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and a pair of notches extending into opposite sides of the middle portion; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.