Semiconductor device
US9006805B2 · kind B2 · utility
8Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.