Patent · US Active

Conductive lines and pads and method of manufacturing thereof

US9006898B2 · kind B2 · utility

2Cited by

16References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roland Hampp · Bad Abbach, DE
Thomas Fischer · Umkirch, DE
Uwe Hoeckele · Regensburg, DE

Key dates

Filing date	Oct 23, 2013
Grant date	Apr 14, 2015
Priority date	—
Expiry date	Oct 23, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method are disclosed. The semiconductor device includes a substrate having a first region and a second region and an insulating layer arranged on the substrate. A first conductive layer is arranged in or on insulating layer in the first region and a second conductive layer is arranged in or on the insulating layer in the second region. The first conductive layer comprises a first conductive material and the second conductive layer comprises a second conductive material wherein the first conductive material is different than the second conductive material. A metal layer is arranged on the first conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.