Patent · US Active

Layer stack

US9006899B2 · kind B2 · utility

0Cited by

0References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Paul Ganitzer · Villach, AT
Kurt Matoy · Strau, AT
Martin Sporn · Villach, AT
Mark Harrison · Wernberg, AT

Key dates

Filing date	Dec 14, 2012
Grant date	Apr 14, 2015
Priority date	—
Expiry date	Dec 14, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13091
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the intermediate layer, and a third Ag based layer is deposited on the second layer. The layer stack is tempered in such a way that at least one inter-metallic phase is formed between at least two metals of the group containing Ti, Al, Ni and V.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.