Patent · US Active

Etching polysilicon

US9012318B2 · kind B2 · utility

0Cited by
4References
24Claims
0Family size

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Inventors

Key dates

Filing dateSep 21, 2012
Grant dateApr 21, 2015
Priority date—
Expiry dateNov 20, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/035
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.