Method of manufacturing semiconductor device
US9012321B1 · kind B1 · utility
18Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2014 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | May 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes forming a sacrificial film as part of a process of forming a semiconductor device. The sacrificial film has a relatively high etch selectivity with respect to other materials of the semiconductor device so as to reduce loss of etching masks and improve the quality of a components (e.g., buried contacts) of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.