Patent · US Active

Method for semiconductor cross pitch doubled patterning process

US9012330B2 · kind B2 · utility

2Cited by

0References

8Claims

0Family size

Assignee

NANYA TECHNOLOGY CORPORATION · TW

Inventors

Vinay Nair · Boise, US
Lars Heineck · Dresden, DE

Key dates

Filing date	Aug 22, 2013
Grant date	Apr 21, 2015
Priority date	—
Expiry date	Aug 22, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0337
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention provides a method of cross double pitch patterning for forming a contact printing mask. First, a first, a second and a third layer a successively deposited; a photoresist is deposited on the third layer, and then trimmed into a first pre-pattern, on which an oxide layer is deposited. The oxide layer is etched into spacers forming a first pattern that is then etched into the third layer. A second cross pattern is formed the same way on the third layer. Finally the first and second layers are etched with selectivity both patterns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.