Etching method and non-transitory storage medium
US9012331B2 · kind B2 · utility
2Cited by
0References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 29, 2014 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | May 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.