Wafer level packaged GaN power semiconductor device and the manufacturing method thereof
US9012920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2013 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Apr 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/81815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a GaN (gallium nitride) compound power semiconductor device and a manufacturing method thereof. The gallium nitride compound power semiconductor device includes: a gallium nitride compound element formed by being grown on a wafer; a contact pad including a source, a drain, and a gate connecting with the gallium nitride compound element; a module substrate to which the nitride gallium compound element is flip-chip bonded; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate so that the contact pad and the bonding pad are flip-chip bonded. By this configuration, it is possible to reduce the process costs by forming the bump on the substrate based on the wafer level, rapidly emit the heat generated from an AlGaN HEMT device by forming the sub source contact pad and the sub drain contact pad of the substrate in the active region, and efficiently emit the heat generated from the AlGaN HEMT device by forming a via hole on the substrate and filling the via hole with the conductive metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.