Field effect transistor devices with regrown p-layers

US9012984B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Lin Cheng · Chapel Hill, US
• Anant Agarwal · San Jose, US
• John Williams Palmour · Raleigh, US

Key dates

• Filing date: Mar 13, 2013
• Grant date: Apr 21, 2015
• Expiry date: Mar 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type, and a source region on the body layer, the source region having the first conductivity type. The device further includes a trench extending through the source region and the body layer and into the drift layer, a channel layer on the inner sidewall of the trench, the channel layer having the second conductivity type and having an inner sidewall opposite an inner sidewall of the trench, a gate insulator on the inner sidewall of the channel layer, and a gate contact on the gate insulator.