MR device with synthetic free layer structure
US9013016B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jan 28, 2014 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.