Method for making image sensors using wafer-level processing and associated devices
US9013017B2 · kind B2 · utility
4Cited by
10References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2012 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Jul 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A method of making image sensor devices may include forming a sensor layer including image sensor ICs in an encapsulation material, bonding a spacer layer to the sensor layer, the spacer layer having openings therein and aligned with the image sensor ICs, and bonding a lens layer to the spacer layer, the lens layer including lens in an encapsulation material and aligned with the openings and the image sensor ICs. The method may also include dicing the bonded-together sensor, spacer and lens layers to provide the image sensor devices. Helpfully, the method may use WLP to enhance production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.