Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning
US9017533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2008 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Mar 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3444
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.