Intra-cavity gettering of nitrogen in SiC crystal growth
US9017629B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2006 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.