Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices

US9018037B1 · kind B1 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Federico Nardi · San Jose, US
• Randall J. Higuchi · San Jose, US
• Robert A. Huertas · Hollister, US
• Yun Wang · San Jose, US

Key dates

• Filing date: Dec 5, 2013
• Grant date: Apr 28, 2015
• Expiry date: Dec 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

Forming a resistive switching layer having a vertical interface can generate defects confined along the interface between two electrodes. The confined defects can form a pre-determined region for filament formation and dissolution, leading to low power resistive switching and low program voltage or current variability. In addition, the filament forming process of the resistive memory device can be omitted due to the existence of the confined defects.