Plasma processing method
US9018075B2 · kind B2 · utility
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18Claims
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Assignee
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Key dates
| Filing date | Feb 24, 2012 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.