Method for forming layer constituted by repeated stacked layers
US9018093B2 · kind B2 · utility
502Cited by
8References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Feb 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.