Plural differential pair employing FinFET structure

US9018713B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Karl R. Erickson · Rochester, US
• Phil C. Paone · Rochester, US
• David P. Paulsen · Dodge Center, US
• John E. Sheets, II · Zumbrota, US
• Gregory J. Uhlmann · Rochester, US
• Kelly L. Williams · Rochester, US

Key dates

• Filing date: Jun 25, 2012
• Grant date: Apr 28, 2015
• Expiry date: Feb 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A plural differential pair may include a first semiconductor fin having first and second drain areas. First and second body areas may be disposed on the fin between the first and second drain areas. A source area may be disposed on the fin between the first and second body areas. The plural differential pair may include a first pair of fin field effect (FinFET) transistors and a second pair of FinFET transistors. The plural differential pair may include first and second top fin areas projecting from respective portions of a top side of the first and second body areas of the fin. The first and second top fin areas may each have a width that is wider than the first and second body areas of the fin.