Patent · US Active

Micromechanical semiconductor sensing device

US9021887B2 · kind B2 · utility

3Cited by

8References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Franz-Peter Kalz · Regensburg, DE
Horst Theuss · Wenzenbach, DE
Bernhard Winkler · Birkenfeld, DE
Khalil Hosseini · Weihmichl, DE
Joachim Mahler · Regensburg, DE
Manfred Mengel · Bad Abbach, DE

Key dates

Filing date	Dec 19, 2011
Grant date	May 5, 2015
Priority date	—
Expiry date	Mar 1, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3511
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.