Pattern forming method
US9023225B2 · kind B2 · utility
2Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.