Multi-zone temperature control for semiconductor wafer
US9023664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Feb 26, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.