High sensitivity eddy current monitoring system
US9023667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2011 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Mar 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.