Methods of forming stressed multilayer FinFET devices with alternative channel materials

US9023705B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Abhijeet Paul · Poway, US
• Ajey Poovannummoottil Jacob · Watervliet, US
• Min-hwa Chi · Palo Alto, US

Key dates

• Filing date: Nov 1, 2013
• Grant date: May 5, 2015
• Expiry date: Nov 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/364

Abstract

Disclosed are methods and devices that involve formation of alternating layers of different semiconductor materials in the channel region of FinFET devices. The methods involve forming such alternating layers of different semiconductor materials in a cavity formed above the substrate fin and thereafter forming a gate structure around the fin using gate first or gate last techniques.