Top corner rounding by implant-enhanced wet etching

US9023709B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Hans-Peter Moll · Dresden, DE
• Marco Lepper · Dresden, DE
• Werner Graf · Chur, CH

Key dates

• Filing date: Aug 27, 2013
• Grant date: May 5, 2015
• Expiry date: Nov 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31155
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.