Method of fabricating semiconductor device
US9023718B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jan 28, 2014 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.