Compound semiconductor growth using ion implantation
US9023722B2 · kind B2 · utility
1Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | May 11, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Dec 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor. Combinations of implants may be performed to cause increased growth in certain regions of the workpiece, such as between regions where growth is reduced. Growth also may be reduced or prevented at the periphery of the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.