Carbon deposition-etch-ash gap fill process
US9023731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Aug 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor wafers are provided. The techniques may include performing deposition-etching operations in a cyclic fashion to fill a gap feature with carbon. A plurality of such deposition-etching cycles may be performed, resulting in a localized build-up of carbon film on the top surface of the semiconductor wafer near the gap feature. An ashing operation may then be performed to preferentially remove the built-up material from the top surface of the semiconductor wafer. Further groups of deposition-etching cycles may then be performed, interspersed with further ashing cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.