Superlattice phase change memory including Sb2Te3 layers containing Zr

US9024284B2 · kind B2 · utility

Assignee

• HITACHI, LTD. · JP

Inventors

• Takasumi Oyanagi · Tokyo, JP
• Norikatsu Takaura · Tokyo, JP
• Mitsuharu Tai · Kokubunji, JP
• Masaharu Kinoshita · Tokyo, JP
• Takahiro Morikawa · Tokyo, JP
• Kenichi Akita · Tokyo, JP
• Masahito Kitamura · Toyama, JP

Key dates

• Filing date: Nov 27, 2013
• Grant date: May 5, 2015
• Expiry date: Nov 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/826

Abstract

A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of Sb2Te3 and GeTe. The phase change memory layer having the superlattice structure includes a Sb2Te3 layer containing Zr in contact with the first electrode.