Patent · US Active

Device with nitride nanowires having a shell layer and a continuous layer

US9024338B2 · kind B2 · utility

3Cited by

13References

10Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Werner Seifert · Bargteheide, DE
Damir Asoli · Malmö, SE
Zhaoxia Bi · Lund, SE
Jonas Ohlsson · Malmö, SE
Lars Samuelson · Malmö, SE

Key dates

Filing date	Nov 7, 2013
Grant date	May 5, 2015
Priority date	—
Expiry date	Nov 7, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/932
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.