Metal shield structure and methods for BSI image sensors
US9024369B2 · kind B2 · utility
6Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 18, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jun 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
Abstract
A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an interconnect layer is formed over the first side of the semiconductor substrate, a backside illumination film formed over a second side of the semiconductor substrate, a metal shielding layer formed over the backside illumination film and a via embedded in the backside illumination film and coupled between the metal shielding layer and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.