Trench transistors and methods with low-voltage-drop shunt to body diode
US9024379B2 · kind B2 · utility
6Cited by
4References
20Claims
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Assignee
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Key dates
| Filing date | Feb 4, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Feb 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.