Patent · US Active

FinFET with body contact

US9024387B2 · kind B2 · utility

10Cited by
14References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 25, 2012
Grant dateMay 5, 2015
Priority date
Expiry dateJun 25, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/215

Abstract

A semiconductor device has a FinFET with at least two independently controllable FETs on a single fin. The fin may have a body area with a width between two vertical sides, each side has a single FET. The fin also may have a top fin area that is wider than the body area and is electrically independent from the two FETs. The top fin area may be capable of receiving a body contact structure which may be connected to an electrical conductor as to regulate the voltage in the body area of the fin.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.