FinFET with body contact
US9024387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jun 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A semiconductor device has a FinFET with at least two independently controllable FETs on a single fin. The fin may have a body area with a width between two vertical sides, each side has a single FET. The fin also may have a top fin area that is wider than the body area and is electrically independent from the two FETs. The top fin area may be capable of receiving a body contact structure which may be connected to an electrical conductor as to regulate the voltage in the body area of the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.