High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
US9028917B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Jul 27, 2010 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Sep 18, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.