Forming a hardmask capping layer
US9028918B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Aug 21, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Feb 21, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A capping layer is formed over a hardmask layer to increase the etch resistance and overall performance of the hardmask layer. Embodiments include forming a hardmask layer over a substrate and forming a capping layer on the hardmask layer, the capping layer including a stack of at least two nanolayers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.