Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby
US9029071B2 · kind B2 · utility
2Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2011 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.