Tunneling field-effect transistor with direct tunneling for enhanced tunneling current

US9029218B2 · kind B2 · utility

Assignee

• Sematech, Inc. · US

Inventors

• Wei-Yip Loh · Hsinchu, TW
• Brian Coss · Coppell, US
• Kanghoon Jeon · Albany, US

Key dates

• Filing date: Apr 4, 2013
• Grant date: May 12, 2015
• Expiry date: May 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction. The abrupt junction may be formed by placement of a dielectric layer or a dielectric layer and a semiconductor layer in a current path between the source and drain regions. The dielectric layer may be a low permittivity oxide such as silicon oxide, lanthanum oxide, zirconium oxide, or aluminum oxide.