Patent · US Active

Advanced handler wafer bonding and debonding

US9029238B2 · kind B2 · utility

23Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2012
Grant dateMay 12, 2015
Priority date
Expiry dateMay 9, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for processing a semiconductor wafer includes applying a release layer to a transparent handler. An adhesive layer, that is distinct from the release layer, is applied between a semiconductor wafer and the transparent handler having the release layer applied thereon. The semiconductor wafer is bonded to the transparent handler using the adhesive layer. The semiconductor wafer is processed while it is bonded to the transparent handler. The release layer is ablated by irradiating the release layer through the transparent handler with a laser. The semiconductor wafer is removed from the transparent handler.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.