Advanced handler wafer bonding and debonding
US9029238B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | May 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a semiconductor wafer includes applying a release layer to a transparent handler. An adhesive layer, that is distinct from the release layer, is applied between a semiconductor wafer and the transparent handler having the release layer applied thereon. The semiconductor wafer is bonded to the transparent handler using the adhesive layer. The semiconductor wafer is processed while it is bonded to the transparent handler. The release layer is ablated by irradiating the release layer through the transparent handler with a laser. The semiconductor wafer is removed from the transparent handler.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.