Patent · US Active

Method for producing a semiconductor device and field-effect semiconductor device

US9029243B2 · kind B2 · utility

1Cited by

3References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Peter Irsigler · Ried im Innkreis, AT

Key dates

Filing date	Oct 8, 2012
Grant date	May 12, 2015
Priority date	—
Expiry date	Oct 8, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/974
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*1014 cm−3, and partially out-diffusing nitrogen to reduce the nitrogen concentration at least close to the main surface. Further, a semiconductor device is provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.