Patent · US Active

Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layer

US9029254B2 · kind B2 · utility

0Cited by

3References

12Claims

0Family size

Assignee

STMicroelectronics (Crolles 2) SAS · FR

Inventors

Pierre Caubet · Le Versoud, FR
Florian Domengie · Crolles, FR
Sylvain Baudot · Dresden, DE

Key dates

Filing date	Sep 20, 2013
Grant date	May 12, 2015
Priority date	—
Expiry date	Oct 17, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/021
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming an aluminum titanium nitride layer on a wafer by plasma-enhanced physical vapor deposition including a first step at a radio frequency power ranging between 100 and 500 W only, and a second step at a radio frequency power ranging between 500 and 1,000 W superimposed to a D.C. power ranging between 500 and 1,000 W. An insulated gate comprising such an aluminum titanium nitride layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.